@InProceedings{GonçalvesSandIrit:2003:FiEmBo,
author = "Gon{\c{c}}alves, J. A. N. and Sandonato, Gilberto Marrega and
Irita, Ricardo Toshiyuki",
title = "Field emission from boron-doping polycrystalline diamond films on
silicon",
booktitle = "Proceedings...",
year = "2003",
organization = "Latin American Workshop on Plasma Physics, 10; Brazilian Meeting
on Plasma Physics, 7.",
keywords = "plasma technology.",
abstract = "This work deals with the study and development of the boron-doped
diamond field emission cathodes. These cathodes have the aim to
produce the primary and neutralizer electrons for an ion thruster
prototype under development at the Laborat{\'o}rio Associado de
Plasma (LAP) at Instituto Nacional de Pesquisas Espaciais (INPE).
The prototype has been designed to produce 1mN thrust, using argon
or xenon as propellant. The ion engine is intended to be used in
the discharging and attitude control of the geosynchronous
satellites, such as those under development by the Space Brazilian
Program. The apparent negative electron affinity (NEA) of diamond
surface is interesting from both fundamental and applied
perspectives. Well-understood requirements of surface chemistry
and heavy p-type doping are variance with the observations of NEA
characteristics from doped surface-hydrogenated diamond films.
Technological interest, such as electron multipliers, cold
cathodes, field emitters motivates a fundamental understanding of
the mechanisms of electron emission. The unique surface chemistry
of diamond emitters and environments where conventional material
fail. The field emission current from boron-doped polycrystalline
diamond films grown by hot-filament-assisted chemical vapor
deposition (CVD) was investigated. To this end, we have performed
experiments on a set of parallel plane diodes with the cathodes
consisting of diamond films doped with boron at boron/carbon (B/C)
rations of 2,000 4,000, 8,000, 12,000, 16,000 and 20,000ppm. The
current measurements were, taken at a distance of 50 µm, carried
out as a function of voltage and indicate that the samples exhibit
a negative electron affinity after exposure to hydrogen plasma and
threshold voltages ranging from 30 to 40 Vµm. The film with the
lowest work function was 4,000 ppm (B/C). This result is in
concordance with the results achieved in electrochemical
electrodes.",
conference-location = "S{\~a}o Pedro, 2003",
conference-year = "2003",
copyholder = "SID/SCD",
language = "en",
targetfile = "JANGoncalves_Poster_LAWPP2003b.pdf",
urlaccessdate = "02 maio 2024"
}